Related Experiment Video

Updated: Jul 1, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.5K

Shear horizontal waves in a multiferroic composite semiconductor structure

Lei Yang1, Enrico Zappino2, Erasmo Carrera2

  • 1Smart Materials and Advanced Structures Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo 315211, China; School of Intelligent Manufacturing, Taizhou University, Taizhou 318000, China; Mul2 Group, Department of Mechanical and Aerospace Engineering, Politecnico di Torino, Turin 10129, Italy.

Ultrasonics
|March 9, 2024
PubMed

Keywords:
Electromechanical fieldMulti-field couplingMultiferroic composite piezoelectric semiconductorPropagation characteristicsSH wave

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.1K

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
257
Shear on the Horizontal Face of a Beam Element01:16

Shear on the Horizontal Face of a Beam Element

To understand shear on the flat side of a prismatic beam element, consider the vertical and horizontal shearing forces, and the normal forces, acting on the element. The element's upper (U) and lower (L) sections, which are divided by the beam's neutral axis, are examined. The equilibrium of these forces is determined by applying the equilibrium equation, which helps identify the horizontal shearing force. This force is directly related to the bending moments and the cross-section's...
173
Standing Waves in a Cavity01:28

Standing Waves in a Cavity

A household microwave and lasers are examples of standing electromagnetic waves in a cavity. When two conducting metal plates are placed parallel at the nodal planes, it creates a cavity where standing waves are formed. The cavity between the two planes is analogous to a stretched string held at the points x = 0 and x = L. Here, the distance 'L' between the two planes must be an integer multiple of half of the wavelength. The wavelengths that satisfy this condition are given by:
919
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
350
Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
246