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Nitrous acid, a weak acid, is prepared in situ via the reaction of sodium nitrite with a strong acid under cold conditions. This nitrous acid prepared in situ reacts with primary arylamines to form arenediazonium salts. Such reactions are known as diazotization reactions. As shown in Figure 1, the formation of arenediazonium salts begins with the decomposition of nitrous acid in an acidic solution to give nitrosonium ions.
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If a set of reactants can yield multiple constitutional isomers, but one of the isomers is obtained as the major product, the reaction is said to be regioselective. In such reactions, bond formation or breaking is favored at one reaction site over others.
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Modified Donor End Caps for Binary-to-Ternary WORM Memory Conversion in N-Heteroaromatic Systems.

Ramesh Gayathri1, Madanan Akshaya1, Predhanekar Mohamed Imran2

  • 1Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India.

Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry
|March 20, 2024
PubMed
Summary

Novel organic small molecules were developed for non-volatile resistive switching memory. Phenazine-based compounds show high ON/OFF ratios and stability, with one exhibiting ternary memory performance.

Keywords:
D-A systemOrganic MemoryPhenazineQuinoxalineWORM

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Nanotechnology

Background:

  • Resistive switching random-access memory (RRAM) is a promising non-volatile memory technology.
  • Organic small molecules offer tunable properties for advanced electronic devices.
  • Developing efficient and stable organic materials for memory applications is crucial.

Purpose of the Study:

  • To design and synthesize novel D-π-A type organic small molecules for non-volatile resistive switching WORM memory.
  • To investigate the structure-property correlations of these molecules.
  • To evaluate their performance as resistive memory devices.

Main Methods:

  • Synthesis of D-π-A organic small molecules incorporating phenazine/quinoxaline and triphenylamine units.
  • Photophysical and electrochemical analyses to determine electronic properties.
  • Thin film fabrication and characterization of memory device performance.
  • Density functional theory (DFT) calculations to elucidate the switching mechanism.

Main Results:

  • Synthesized molecules exhibited intramolecular charge transfer and suitable band gaps (2.44–2.83 eV).
  • Devices demonstrated non-volatile resistive switching with high ON/OFF ratios (10^3–10^4) and low threshold voltage (-0.74 V).
  • Phenazine-based compounds showed superior performance, and one molecule displayed ternary memory characteristics.

Conclusions:

  • The designed organic small molecules are effective for non-volatile resistive switching memory.
  • Charge transfer and charge trapping mechanisms, supported by DFT, are key to the observed resistive switching.
  • These materials hold potential for next-generation memory applications.