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High-density via RRAM cell with multi-level setting by current compliance circuits
Yu-Cheng Hsieh1, Yu-Cheng Lin1, Yao-Hung Huang1
1Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Discover Nano
|March 25, 2024
Summary
This study demonstrates multi-level storage in via resistive random-access memory (RRAM) using standard FinFET CMOS logic. New circuits ensure stable resistance control, improving multi-level state stability and distribution for advanced memory applications.
Area of Science:
- Solid-state device physics
- Non-volatile memory technologies
- Advanced semiconductor manufacturing
Background:
- Resistive random-access memory (RRAM) offers high density and low power consumption for non-volatile memory.
- Achieving stable multi-level storage in RRAM is crucial for increasing memory capacity.
- Standard CMOS logic processes are desirable for integrating novel memory devices.
Purpose of the Study:
- To report and demonstrate multi-level storage capabilities in via RRAM for the first time.
- To develop and validate novel current compliance setting circuits for stable resistance control.
- To improve the stability and tighten the distribution of multi-level states in via RRAM.
Main Methods:
- Implementation of multi-level storage in via RRAM using a standard FinFET CMOS logic process.
- Control of multi-level states by precisely managing current compliance during set operations.
- Design and integration of new current compliance setting circuits to mitigate process variation effects.
Main Results:
- Successful demonstration of multi-level storage in via RRAM.
- Achieved stable resistance control through proposed current compliance setting circuits.
- Observed improved stability and tightened distributions for multi-level states in via RRAM cells.
Conclusions:
- Multi-level storage is feasible and demonstrated in via RRAM within a standard FinFET CMOS logic process.
- The proposed current compliance circuits effectively enhance the stability and reliability of multi-level states.
- This work paves the way for higher-density non-volatile memory solutions based on via RRAM technology.
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