Unlocking the Potential of Porous Bi2Te3-Based Thermoelectrics Using Precise Interface Engineering through Atomic

Seunghyeok Lee1,2, Gwang Min Park1,3, Younghoon Kim4

  • 1Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea.

Summary

This study developed advanced porous bismuth antimony telluride (BST) thermoelectric materials by combining porous structuring and atomic layer deposition (ALD) interface engineering. This approach significantly improved thermoelectric efficiency and mechanical strength, overcoming key limitations of porous materials.

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