Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Types of Reversible Electrodes

Types of Reversible Electrodes

For electrode reversibility to be maintained, all the reactants and products involved in the half-reaction must be present at the electrode. There are several types of reversible electrodes (half-cells).In metal-metal-ion electrodes, a metal balances electrochemically with a solution of its own ions. Examples are Cu2+|Cu and Zn2+|Zn. Metals that react with the solvent, like group 1 and most group 2 metals, which react with water, and zinc, which reacts with aqueous acidic solutions, cannot be...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Cell-specific dedifferentiation in <i>Arabidopsis thaliana</i>.

bioRxiv : the preprint server for biology·2026

Same author

First-in-human intracisternal dosing of RGX-111 in severe MPS I is well tolerated and generates sustained neurodevelopment without HSCT.

Molecular therapy : the journal of the American Society of Gene Therapy·2026

Same author

Case of primary digital embryonal rhabdomyosarcoma in a cat.

The Canadian veterinary journal = La revue veterinaire canadienne·2026

Same author

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density.

Micromachines·2025

Same author

Effects of Annealing Temperature Combinations in InO<sub>x</sub>/AlO<sub>x</sub> Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors.

Materials (Basel, Switzerland)·2025

Same author

Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell.

Nanomaterials (Basel, Switzerland)·2025

Search research articles

Related Experiment Video

Updated: Jun 21, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y₂O₃ Random-Access Memory.

Yoonjin Cho¹, Sangwoo Lee¹, Seongwon Heo¹

¹School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|March 27, 2024

Summary

Silver top electrodes enhance Y2O3 resistive random-access memory (RRAM) device performance. Faster silver ion migration in Y2O3 reduces SET voltage and improves endurance for nonvolatile memory applications.

Keywords:

CBRAM RRAM Y2O3 sol–gel top electrodes

More Related Videos

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

Published on: April 16, 2017

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Related Experiment Videos

Last Updated: Jun 21, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

Published on: April 16, 2017

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

Materials Science
Electrical Engineering
Solid-State Physics

Background:

Resistive random-access memory (RRAM) devices based on Y2O3 are crucial for nonvolatile memory.
The choice of top electrodes (TEs) significantly influences the electrical characteristics of Y2O3 RRAM devices.
Understanding conductive filament formation is key to optimizing RRAM performance.

Purpose of the Study:

To investigate the impact of different top electrodes (Ag and Cu) on Y2O3 RRAM device performance.
To analyze the role of oxidation, ion migration, and reduction in conductive filament formation.
To elucidate the electrochemical properties of TEs influencing resistive switching characteristics.

Main Methods:

Fabrication of sol-gel processed Y2O3 RRAM devices with Ag and Cu TEs.
Electrical characterization of ITO/Y2O3/Ag and ITO/Y2O3/Cu RRAM devices.
Analysis of oxidation processes and mobile ion migration within the Y2O3 active channel.

Main Results:

Ag TEs facilitate easier conductive filament formation compared to Cu TEs.
Faster migration of Ag mobile ions within Y2O3 leads to reduced SET voltage.
Improved programming-erasing cycles (endurance) were observed with Ag TEs.

Conclusions:

The electrochemical properties of TEs are critical for RRAM performance.
Ag TEs offer superior performance in Y2O3 RRAM due to faster ion migration.
This study provides insights into optimizing metal oxide-based atomic switches and conductive-metal-bridge-filament cells.