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Updated: Jun 21, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory
Yoonjin Cho1, Sangwoo Lee1, Seongwon Heo1
1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Silver top electrodes enhance Y2O3 resistive random-access memory (RRAM) device performance. Faster silver ion migration in Y2O3 reduces SET voltage and improves endurance for nonvolatile memory applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid-State Physics
Background:
- Resistive random-access memory (RRAM) devices based on Y2O3 are crucial for nonvolatile memory.
- The choice of top electrodes (TEs) significantly influences the electrical characteristics of Y2O3 RRAM devices.
- Understanding conductive filament formation is key to optimizing RRAM performance.
Purpose of the Study:
- To investigate the impact of different top electrodes (Ag and Cu) on Y2O3 RRAM device performance.
- To analyze the role of oxidation, ion migration, and reduction in conductive filament formation.
- To elucidate the electrochemical properties of TEs influencing resistive switching characteristics.
Main Methods:
- Fabrication of sol-gel processed Y2O3 RRAM devices with Ag and Cu TEs.
- Electrical characterization of ITO/Y2O3/Ag and ITO/Y2O3/Cu RRAM devices.
- Analysis of oxidation processes and mobile ion migration within the Y2O3 active channel.
Main Results:
- Ag TEs facilitate easier conductive filament formation compared to Cu TEs.
- Faster migration of Ag mobile ions within Y2O3 leads to reduced SET voltage.
- Improved programming-erasing cycles (endurance) were observed with Ag TEs.
Conclusions:
- The electrochemical properties of TEs are critical for RRAM performance.
- Ag TEs offer superior performance in Y2O3 RRAM due to faster ion migration.
- This study provides insights into optimizing metal oxide-based atomic switches and conductive-metal-bridge-filament cells.
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