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Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Updated: Jun 29, 2025

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Doping-Less Feedback Field-Effect Transistors.

Hakin Kim¹, Doohyeok Lim^1,2

¹Department of Nano Electronic Convergence Engineering, Kyonggi University, Suwon 16227, Gyeonggi-do, Republic of Korea.

|March 28, 2024

Summary

This summary is machine-generated.

We developed novel doping-less feedback field-effect transistors (DLFBFETs) using intrinsic semiconductor bodies. These transistors offer excellent performance, including a high on/off ratio and steep switching, without requiring dopants.

Keywords:

charge plasma doping-less device feedback field-effect transistor

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Area of Science:

Semiconductor device physics
Materials science

Background:

Traditional field-effect transistors often rely on complex doping processes.
Charge plasma phenomena can enable doping-less transistor operation.

Purpose of the Study:

To propose and characterize novel doping-less feedback field-effect transistors (DLFBFETs).
To demonstrate a simplified fabrication process for these devices.

Main Methods:

Fabrication of 5 nm thick intrinsic semiconductor bodies with dual gates.
Utilizing charge plasma phenomena for virtual doping via electrodes and gate biases.
Applying gate voltages to control device operation modes (diode or FBFET).

Main Results:

DLFBFETs fabricated via a simple metal-silicon contact process without doping.
Demonstrated tunable operation in diode or feedback field-effect transistor (FBFET) modes.
Achieved an on/off current ratio of approximately 10^4 and steep switching characteristics (~1 mV/decade) in FBFET mode.

Conclusions:

Doping-less feedback field-effect transistors (DLFBFETs) can be fabricated using a simplified process.
Positive feedback mechanisms in DLFBFETs enable high performance without dopants.
These devices offer a promising alternative for future electronic applications.