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Universal Logic-in-Memory Gates Using Reconfigurable Silicon Transistors.

Sunhyuk Kim¹, Nahyeon Kim¹, Yaeyeon Ko¹

¹School of Electronic Engineering, Kyonggi University, Suwon 16227, Republic of Korea.

|December 31, 2025

Summary

This summary is machine-generated.

Researchers developed a reconfigurable silicon transistor capable of universal logic gates. This novel device enables both NAND and NOR logic-in-memory operations within a single structure for future low-power electronics.

Keywords:

control gate polarity gate universal logic-in-memory gate

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Area of Science:

Solid-state physics
Semiconductor device engineering
Nanoelectronics

Background:

Current electronic systems face challenges in high-density integration and power efficiency.
Logic-in-memory (LIM) architectures offer a promising solution by combining computation and data storage.
Implementing universal logic gates within a single transistor structure is crucial for advancing LIM systems.

Purpose of the Study:

To propose and analyze a reconfigurable silicon transistor for universal logic gate implementation.
To investigate the device's potential for logic-in-memory (LIM) circuit operations.
To achieve high performance metrics like steep subthreshold swing and high ON/OFF current ratio.

Main Methods:

A novel reconfigurable transistor based on a p-i-n structure with two polarity gates (PGs) and one control gate was designed.
Two-dimensional technology computer-aided design (TCAD) simulations were employed to analyze electrical characteristics and LIM operations.
The device's reconfigurability into p-channel or n-channel modes via virtual doping effects was investigated.

Main Results:

The proposed transistor demonstrated perfect reconfigurability into p-channel or n-channel modes.
Achieved a steep subthreshold swing of approximately 1 mV/dec and a high ON/OFF current ratio of 10¹⁰ due to positive feedback and latch-up.
Successfully verified NAND LIM operation in p-channel mode and NOR LIM operation in n-channel mode using two devices in parallel.

Conclusions:

The reconfigurable silicon transistor can perform both NAND and NOR LIM operations using the same device structure.
This technology is a significant step towards developing high-density, low-power LIM systems.
The proposed device holds potential for future integrated circuit designs demanding efficiency and versatility.