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A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Sheng Qu1,2, Libin Gao1,2, Jiamei Wang1,2

  • 1School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.

Micromachines
|March 28, 2024
PubMed
Summary

Germanium telluride (GeTe) is a promising material for radio frequency (RF) switches, offering low loss and high speed. This review details GeTe film characterization and compares different RF phase-change switch designs.

Keywords:
GeTeRF performanceRF phase-change switcheschalcogenidesthin films

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