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Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

Renyi Li1, Chen Ge1, Chenwei Liang1

  • 1Nanjing Electronic Devices Institute, Nanjing 210016, China.

Micromachines
|March 28, 2024
PubMed

Keywords:
Doherty PAEE_HEMT modelGaN HEMT

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