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Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS2/WSe2 van der Waals Heterostructures

Zenglin Cao1, Lin Zhu1, Kailun Yao1

  • 1School of Physics and Wuhan National High Magnetic field center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

ACS Applied Materials & Interfaces
|April 4, 2024
PubMed

Keywords:
Schottky barrier heightVS2/WSe2-vdWHs-FETsab initio quantum transport simulationp-type Ohmic contactunderlap structure

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