Influence of Lattice Defects on Trans-Oligoene Substructure Formation in Graphene

The photochemical reaction of iodine and graphene induces strong new Raman modes due to the formation of trans-oligoene substructures in graphene domains. This unique reactivity was demonstrated before on defect-free graphene, however leaving the influence of e. g. carbon vacancies, unexplored. Here, we investigate the photochemical reaction applied on graphene with varying average distances of lattice defects and statistically analyze the characteristic Raman modes which develop with the iodination reaction. We show that the iodination reaction does not lead to Raman-active defects and thus, the newly formed trans-oligoene substructures do not contribute to the D-mode of graphene. A statistical analysis reveals the correlation between the average distance of lattice defects and the intensity of the v₁-mode. For defective graphene with average defect distances below ~1 nm no new Raman modes evolve, which is the lower limit of the substructure size probed at 532 nm and explains why this observation was not possible before using common graphene oxide as graphene source.