E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Area of Science:

• Semiconductor Physics
• Materials Science
• Optoelectronics

Background:

• Directly growing III-V quantum dot (QD) lasers on silicon is crucial for on-chip light sources in photonic integrated circuits (PICs).
• Existing research focuses on O-, C-, and L-band QD lasers on silicon, leaving the E-band telecommunication wavelength unaddressed.
• The development of E-band QD lasers on silicon is essential for expanding the capabilities of silicon photonics.

Purpose of the Study:

• To demonstrate the first E-band (1365 nm) Indium Arsenide (InAs) quantum dot (QD) micro-disk lasers epitaxially grown on silicon (001) substrates.
• To overcome the limitations of current QD laser technologies on silicon for extended telecommunication wavelengths.
• To pave the way for integrated silicon photonic telecommunication transmitters.

Main Methods:

• Utilizing a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system for epitaxial growth.
• Fabricating micro-disk laser devices on Si (001) substrates.
• Characterizing the optical performance of the fabricated E-band InAs QD micro-disk lasers.

Main Results:

• Successfully demonstrated the first E-band (1365 nm) InAs QD micro-disk lasers directly grown on Si (001).
• Achieved an optical threshold power of 0.424 mW at 200 K.
• Obtained a quality factor (Q) of 1727.2 at 200 K for the micro-disk laser device.

Conclusions:

• The direct epitaxial growth of E-band InAs QD lasers on silicon is feasible.
• These results represent a significant advancement towards on-chip silicon photonic telecommunication transmitters.
• This work opens new avenues for integrated optoelectronics operating at extended telecommunication wavelengths.