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Valley-Polarized Quantum Hall Phase in a Strain-Controlled Dirac System.

G Krizman1, J Bermejo-Ortiz2, T Zakusylo1

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Strain engineering in multivalley systems reveals fully valley-polarized quantum Hall phases. A novel bipolar quantum Hall phase emerges, showing coexisting electron and hole edge states without interference.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Spintronics

Background:

  • Multivalley systems exhibit rich physics related to valley pseudospin, enabling applications like valleytronics.
  • Strain engineering is a powerful tool for tuning electronic properties and exploring novel quantum phases.

Purpose of the Study:

  • To investigate the impact of strain engineering on the quantum Hall effect in Pb_{1-x}Sn_{x}Se Dirac systems.
  • To explore the emergence of new quantum phases driven by changes in valley degeneracy.

Main Methods:

  • Utilizing strain engineering to modify the electronic band structure of Pb_{1-x}Sn_{x}Se.
  • Observing and characterizing quantum Hall phases through transport measurements.

Main Results:

  • Achieved fully valley-polarized quantum Hall phases in the studied system.
  • Observed a unique "bipolar quantum Hall phase" when valley energy splitting surpassed the band gap.
  • Demonstrated the coexistence of hole and electron chiral edge states at distinct valleys within the same quantum well.

Conclusions:

  • Strain engineering effectively controls valley polarization in Pb_{1-x}Sn_{x}Se.
  • The bipolar quantum Hall phase highlights novel phenomena arising from valley manipulation.
  • Coexisting chiral edge states from different valleys do not exhibit destructive interference, opening possibilities for complex electronic devices.