A synapse with low power consumption based on MoTe₂/SnS₂heterostructure

Area of Science:

• Materials Science
• Nanotechnology
• Neuroscience

Background:

• Two-dimensional (2D) materials and van der Waals heterostructures offer promising avenues for enhancing memristor performance.
• Developing efficient synaptic devices is crucial for low-power information storage and neuromorphic computing.

Purpose of the Study:

• To present SnS₂/MoTe₂ heterostructure synaptic transistors.
• To evaluate their synaptic functionalities and power efficiency.

Main Methods:

• Fabrication of SnS₂/MoTe₂ heterostructure synaptic transistors.
• Characterization of synaptic functionalities including short-term and long-term plasticity.
• Measurement of device performance metrics such as power consumption, dynamic range, and non-linearity.

Main Results:

• The synaptic transistors achieved ultra-low power consumption (19 pJ per switching) at 0.1 V bias, comparable to biological synapses.
• Demonstrated various synaptic functionalities: short-term plasticity, long-term plasticity, and paired-pulse facilitation.
• Achieved a high synaptic weight of excitatory postsynaptic current (109.8%), a dynamic range of ~16.22, and non-linearity of 1.79.

Conclusions:

• The SnS₂/MoTe₂ heterostructure synaptic transistors show potential for low-power information storage.
• This study highlights the application of 2D materials in advanced synaptic devices.