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Updated: Jun 25, 2025

ARL Spectral Fitting as an Application to Augment Spectral Data via Franck-Condon Lineshape Analysis and Color Analysis
Published on: August 19, 2021
Correlated Spectroscopy of Electric Noise with Color Center Clusters
Tom Delord1, Richard Monge1, Carlos A Meriles1,2
1Department of Physics, CUNY-City College of New York, New York, New York 10031, United States.
Researchers used spectral diffusion analysis to map trapped carriers near nitrogen-vacancy (NV) centers in diamond. This technique precisely locates nearby traps and determines the charge sign of surrounding defects.
Area of Science:
- Quantum physics
- Materials science
- Nanotechnology
Background:
- Experimental noise can contain valuable information about system-environment interactions.
- Relating time fluctuations to physical observables is challenging.
- Nitrogen-vacancy (NV) centers in diamond are promising for quantum applications.
Purpose of the Study:
- To investigate the dynamics of trapped carriers near NV center clusters.
- To develop a method for characterizing nanoscale environments using spectral diffusion.
- To precisely locate and identify defects interacting with NV centers.
Main Methods:
- Multidimensional and multisensor analysis of spectral diffusion.
- Recursive probing of optical resonances in NV center clusters.
- Deterministic induction of Stark shifts in the cluster spectrum.
Main Results:
- Statistical correlations in spectral fluctuations were established.
- Proximal traps near NV centers were revealed.
- 3D positions of interacting NVs and surrounding trap locations/charge signs were pinpointed.
Conclusions:
- The developed method allows for detailed characterization of photocarrier dynamics.
- This technique can be generalized to other color centers and semiconductor systems.
- Opportunities exist for manipulating nanoscale spin-qubit clusters via electric fields.
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