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CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD-Aluminum Oxide.

Adham Elshaer1,2, Serge Ecoffey1,2, Abdelatif Jaouad1,2

  • 1Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boul. Université, Sherbrooke, QC J1K 0A5, Canada.

Sensors (Basel, Switzerland)
|May 25, 2024
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Summary
This summary is machine-generated.

A novel metal oxide semiconductor (MOS) hydrogen sensor was developed using silicon and atomic layer deposited aluminum oxide. This CMOS-compatible device shows reliable performance for detecting hydrogen gas concentrations.

Keywords:
ALDCMOS compatibleMOS structurecharacterisationfabricationhydrogenplatinumsensing

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Area of Science:

  • Materials Science
  • Semiconductor Device Physics
  • Chemical Sensing

Background:

  • Hydrogen sensors are crucial for safety and industrial process monitoring.
  • Existing sensors often face challenges with fabrication compatibility and reliability.
  • Atomic Layer Deposition (ALD) offers precise thin-film fabrication for semiconductor devices.

Purpose of the Study:

  • To fabricate and characterize a novel p-Si/ALD-Al2O3/Ti/Pt Metal Oxide Semiconductor (MOS) device for hydrogen sensing.
  • To evaluate the sensor's performance using a reliable, industry-compatible CMOS fabrication process.
  • To assess the integration potential of ALD-Al2O3 in CMOS post-processing.

Main Methods:

  • Fabrication of a p-Si/ALD-Al2O3/Ti/Pt MOS stack.
  • Utilizing Atomic Layer Deposition (ALD) for the Al2O3 layer.
  • Testing the device's response and recovery characteristics with varying hydrogen concentrations at elevated temperatures.

Main Results:

  • The fabricated MOS device demonstrated a clear correlation between capacitance variation and hydrogen concentration.
  • Successful hydrogen detection down to 20 ppm at 140 °C was achieved.
  • A response time of 56 seconds was recorded for a 500 ppm hydrogen concentration.

Conclusions:

  • The p-Si/ALD-Al2O3/Ti/Pt MOS device is a viable candidate for hydrogen sensing applications.
  • The CMOS-compatible fabrication process ensures industry relevance and scalability.
  • ALD-Al2O3 is suitable for integration into back-end-of-line (BEOL) or post-processing CMOS steps.