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CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD-Aluminum Oxide
Adham Elshaer1,2, Serge Ecoffey1,2, Abdelatif Jaouad1,2
1Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boul. Université, Sherbrooke, QC J1K 0A5, Canada.
Abstract:
In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 °C was obtained and a response time of 56 s for 500 ppm was recorded.
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