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Updated: Jun 25, 2025
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Published on: August 2, 2019
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Quantum transport in InSb quantum well devices: progress and perspective.
Zijin Lei1,2, Erik Cheah1,2, Rüdiger Schott1,2
1Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
Summary
This review highlights recent quantum transport research on Indium Antimonide (InSb) quantum wells, showcasing their potential for quantum information processing and novel semiconductor physics. Studies explore unique properties and advanced fabrication techniques for low-dimensional systems.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Information Science
Background:
- Indium Antimonide (InSb) is a narrow-band III-V semiconductor with unique electronic properties.
- These properties include a small bandgap, high electron mobility, and strong spin-orbit interactions, making it suitable for advanced applications.
- Recent advancements in heterostructure growth and nanofabrication have enabled detailed quantum transport studies.
Purpose of the Study:
- To review recent progress in quantum transport research on InSb quantum well devices.
- To explore the physics of low-dimensional systems based on InSb.
- To introduce new research directions, including InAsSb quantum wells for narrower bandgaps.
Main Methods:
- Review of recent experimental findings in quantum transport.
- Fabrication of high-quality InSb heterostructures and quantum wells.
- Investigation of low-dimensional systems and ambipolar operations in undoped InSb.
Main Results:
- Quantum transport experiments have been successfully conducted on InSb quantum wells.
- Ambipolar operations achieved in undoped InSb quantum wells facilitate p-type semiconductor studies.
- Advancements pave the way for exploring physics in even narrower bandgap semiconductors like InAsSb.
Conclusions:
- InSb quantum wells are promising for industrial applications and quantum information processing.
- Further research on InSb and related narrow-bandgap materials will advance semiconductor physics.
- High-quality heterostructures and advanced fabrication are key to unlocking the potential of these materials.
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