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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

765
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
765

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Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System
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High Capacitance Porous Ruthenium Nitride Films with High Rate Capability for Micro-Supercapacitors.

Khac Huy Dinh1,2,3, Grace Whang4, Marielle Huve2

  • 1Institut d'Electronique, de Microélectronique et de Nanotechnologies, Université de Lille, CNRS, Université Polytechnique Hauts-de-France, UMR 8520 - IEMN, Lille, F-59000, France.

Small (Weinheim an Der Bergstrasse, Germany)
|June 11, 2024
PubMed
Summary
This summary is machine-generated.

Ruthenium nitride (RuN) films offer high performance for micro-supercapacitors (MSCs). These films provide fast charging and high capacitance, crucial for Internet of Things devices.

Keywords:
micro‐supercapacitorspseudocapacitiveruthenium nitride

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Area of Science:

  • Materials Science
  • Electrochemistry
  • Nanotechnology

Background:

  • Growing demand for high-performance energy storage for Internet of Things (IoT) applications.
  • Micro-supercapacitors (MSCs) are key components in compact energy storage solutions.
  • Need for advanced electrode materials to improve MSC performance.

Purpose of the Study:

  • Investigate Ruthenium nitride (RuN) films as efficient electrode materials for MSCs.
  • Optimize magnetron sputtering parameters to enhance film porosity and electrical conductivity.
  • Understand the correlation between RuN film morphology, structure, and electrochemical properties.

Main Methods:

  • Magnetron sputtering deposition of RuN films.
  • Advanced characterization techniques to analyze film morphology and structure (e.g., X-ray diffraction, electron microscopy).
  • Electrochemical testing in 1 m KOH electrolyte to evaluate capacitance and rate capability.

Main Results:

  • RuN films exhibit a complex structure with mixed Ru and RuN phases and an amorphous oxide layer.
  • Optimized sputtering parameters led to increased film porosity and maintained high electrical conductivity.
  • A 16 µm-thick RuN film achieved a high capacitance of 0.8 F cm⁻² with excellent rate capability.

Conclusions:

  • Ruthenium nitride is a promising electrode material for high-performance micro-supercapacitors.
  • Optimized film structure and properties are critical for achieving superior electrochemical performance.
  • The developed RuN films show potential for fast-charging energy storage in IoT devices.