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In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

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High Efficiency Flat-Type GaN-Based Light-Emitting Diodes with Multiple Local Breakdown Conductive Channels.

Dae-Choul Choi¹, Seung Hun Lee¹, Sung-Nam Lee¹

¹Department of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.

Materials (Basel, Switzerland)

|June 19, 2024

Summary

Flat-type p*-p LEDs offer mesa-etching-free fabrication with comparable light output. Increasing local breakdown conductive channels (LBCCs) reduces resistance, improving efficiency and wall-plug efficiency (WPE) for advanced LED designs.

Keywords:

GaN LED breakdown efficiency

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Area of Science:

Semiconductor device physics
Optoelectronics
Materials science

Background:

Conventional mesa-type LEDs require complex mesa-etching processes, potentially introducing crystal defects.
Flat-type p*-p LEDs offer an alternative fabrication route, eliminating the need for mesa-etching.
Current flat-type p*-p LEDs exhibit higher operating voltages, impacting overall efficiency.

Purpose of the Study:

To investigate methods for reducing the operating voltage and improving the efficiency of flat-type p*-p LEDs.
To enhance the wall-plug efficiency (WPE) and voltage efficiency (VE) of these devices.
To demonstrate a fabrication process for efficient LEDs without mesa-etching-induced crystal defects.

Main Methods:

Fabrication of flat-type p*-p LEDs utilizing a p*-electrode with a local breakdown conductive channel (LBCC).
Formation of LBCCs in the p-type electrode region by applying reverse bias.
Augmentation of the number of LBCCs to increase the contact area and reduce series resistance.

Main Results:

Flat-type p*-p LEDs achieved light output power comparable to conventional mesa-type LEDs at similar injection currents.
Higher operating voltages were observed in flat-type p*-p LEDs due to the smaller p* region.
Increasing the number of LBCCs successfully reduced series resistance, showing potential for improved WPE and VE.

Conclusions:

Flat-type p*-p LEDs provide a viable, mesa-etching-free alternative to conventional LEDs.
Optimizing LBCCs is crucial for mitigating high operating voltages and enhancing WPE and VE.
This approach facilitates the development of efficient, defect-free planar LEDs.