Related Experiment Video
Updated: Jun 23, 2025

Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving
Published on: March 30, 2017
New analysis of the temperature-dependent threshold density for electron self-trapping in gaseous helium
A F Borghesani1, N Bonifaci2, A G Khrapak3
1CNISM Unit, Department of Physics and Astronomy, Università degli Studi di Padova, via F. Marzolo 8, I-35131 Padua, Italy.
Abstract:
We present the results of a new analysis of the literature data on electron mobility μ in dense helium gas aimed at determining the existence of a threshold density for electron self-trapping in gaseous helium as a function of temperature. We have investigated the density dependence of μ and, when available, its dependence on the electric field. The experimental data are favorably rationalized by minimizing the excess free energy of the self-localized states within the optimum fluctuation model. It is shown that the formation of electron bubbles via the self-trapping phenomenon is determined by the delicate balance between the electron thermal energy, the density dependence of the electron energy at the bottom of the conduction band in the gas, and the work necessary to expand the bubble. We show that the self-trapping phenomenon is not limited to low temperatures but occurs at any temperatures for large enough densities.
Related Concept Videos
Atomic Nuclei: Nuclear Spin State Population Distribution
Nuclear Binding Energy
Atomic Spectroscopy: Effects of Temperature
At thermal equilibrium, the relative populations of excited and ground state atoms can be estimated using the Maxwell–Boltzmann distribution. For example, an increase in temperature...
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Molecular Orbital Theory II
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

