GaN Nano Air Channel Diodes: Enabling High Rectification Ratio and Neutron Robust Radiation Operation

Area of Science:

• Semiconductor Device Physics
• Nanoelectronics
• Materials Science

Background:

• Nano air channel transistors (NACTs) offer advantages like high speed and radiation hardness.
• Rectifying nano air channel diodes (NACDs) are vital for field-emission integrated circuits but face symmetry challenges.
• Achieving efficient rectification in NACDs is difficult due to structural and material symmetry.

Purpose of the Study:

• To propose and characterize a vertical Gallium Nitride (GaN) NACD with a uniform nano air channel.
• To overcome the inherent symmetry limitations in traditional NACDs.
• To demonstrate a cost-effective rectifying diode for advanced integrated circuits.

Main Methods:

• Fabrication of a vertical GaN NACD using integrated circuit (IC)-compatible processes.
• Characterization of electrical properties, including turn-on voltage and output current.
• Analysis of rectification ratio and factors influencing performance, such as work function disparity and surface roughness.

Main Results:

• The GaN NACD achieved a low turn-on voltage of 0.3 V and high output current of 5.02 mA at 3 V.
• A remarkable rectification ratio of up to 2.2 × 10⁵ was demonstrated.
• The device exhibits suitability for radiation-rich environments due to its junction-free structure and GaN properties.

Conclusions:

• The proposed vertical GaN NACD effectively overcomes symmetry challenges for rectification.
• This device shows significant potential as a fundamental component for ultrafast and ultrahigh-frequency integrated circuits.
• The cost-effective nature and performance characteristics position this NACD for broad interest in the electronics community.