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Nanolithography-Free Wafer-Scale Precise Manufacturing of Nanogap Electrodes for Functional Applications
Haiquan Zhao1, Feiliang Chen1, Wanying Tang1
1School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Small (Weinheim an Der Bergstrasse, Germany)
|November 11, 2025
Summary
This study introduces an optimized oblique deposition process for fabricating nanogap electrodes (NGEs). This method offers precise gap control and scalability for advanced nanoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Nanogap electrodes (NGEs) are crucial for emerging nanoelectronics but face fabrication challenges.
- Traditional methods struggle with heterogeneous electrodes, consistency, and scalability.
Purpose of the Study:
- To develop an optimized oblique deposition process for NGE fabrication.
- To overcome limitations of traditional methods for NGE production.
Main Methods:
- Optimized oblique deposition technique.
- Fabrication of NGEs with controlled sub-10 nm to hundreds of nanometers gap sizes.
- Demonstration on 4-inch silicon wafers.
Main Results:
- Achieved fine control over NGE gap sizes without high-resolution nanolithography.
- Demonstrated high depth-height (1:6.9) and aspect ratios (1:30,000) in 8 nm gaps.
- Showcased scalability, repeatability, and fabrication of heterogeneous electrodes.
Conclusions:
- The optimized oblique deposition process enables scalable, cost-effective NGE fabrication.
- Successfully applied the method to wafer-level nanoscale vacuum devices (NVDs) with excellent performance.
- Advances potential applications of NGEs in molecular electronics, flexible electronics, and NVDs.
