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Sequential Infiltration Synthesis of Al2O3 in PMMA Thin Films: Temperature Investigation by Operando Spectroscopic
Alessia Motta1,2, Gabriele Seguini1, Claudia Wiemer1
1Unit of Agrate Brianza, CNR-IMM, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy.
ACS Applied Materials & Interfaces
|June 28, 2024
Summary
Sequential infiltration synthesis (SIS) of alumina into PMMA films was studied. Trimethyl aluminum diffusion coefficients and activation energy were determined, advancing SIS process understanding.
Area of Science:
- Materials Science
- Chemical Engineering
- Nanotechnology
Background:
- Sequential infiltration synthesis (SIS) is a scalable method for creating organic-inorganic hybrid materials.
- Fundamental physicochemical phenomena governing SIS processes require further elucidation for industrial applications.
Purpose of the Study:
- To investigate the infiltration of Al2O3 into poly(methyl methacrylate) (PMMA) films using trimethyl aluminum (TMA) and H2O.
- To determine the diffusion coefficient and activation energy of TMA in PMMA.
- To obtain data on the reactivity of TMA with the PMMA matrix.
Main Methods:
- Operando dynamic spectroscopic ellipsometry (SE) was employed to monitor the SIS process in real-time.
- Trimethyl aluminum (TMA) and H2O were used as precursors for Al2O3 infiltration.
- Experiments were conducted at temperatures ranging from 70 to 100 °C.
Main Results:
- The diffusion coefficient of TMA in PMMA was determined at various temperatures.
- The activation energy for TMA diffusion in PMMA was calculated as E_a = 2.51 ± 0.03 eV.
- Temperature-dependent reactivity data of TMA with the PMMA matrix were systematically collected.
Conclusions:
- The study provides crucial insights into the fundamental mechanisms of SIS.
- The obtained data will aid in developing comprehensive theoretical models for SIS processes.
- This research facilitates the optimization of SIS for industrial-scale material synthesis.

