High-Performance WS₂ MOSFETs with Bilayer WS₂ Contacts

WS₂ is a promising transition-metal dichalcogenide (TMDC) for use as a channel material in extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its monolayer thickness, high carrier mobility, and its potential for symmetric n-type and p-type MOSFET performance. However, the formation of stable, low-barrier-height contacts to monolayer TMDCs continues to be a challenge. This study introduces an innovative approach to realize high-performance WS₂ MOSFETs by utilizing bilayer WS₂ (2L-WS₂) in the contact region grown through a two-step chemical vapor deposition process. The 2L-WS₂ devices demonstrate a high I _ON/I _OFF ratio of 10⁸ and a saturated drain current, I _D(SAT), of 280 μA/μm (386 μA/μm) at room temperature (78 K), even while still using conventional metal (Pd or Ni) contacts. Devices featuring a 1L-WS₂ channel and 2L-WS₂ in the contact regions were also fabricated, and they exhibited performance comparable to that of 2L-WS₂ devices. The devices also exhibit good stability with nearly identical performance after storage over a 13 month period. The study highlights the benefits of a hybrid channel thickness approach for TMDC transistors.