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Nanosecond laser annealing processed surface-structured hyperdoped silicon for efficient near-infrared detection
Li Cheng1, Xiang Lv1, Degong Ding1
1State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science & Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China.
Nanotechnology
|August 13, 2024
Summary
Nanosecond laser annealing (NLA) enhances titanium-hyperdoped silicon (Si:Ti) for near-infrared detection by improving crystal structure and reducing charge carrier recombination. This leads to a Si:Ti photodetector with high responsivity at 1550 nm.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Hyperdoped silicon enables sub-bandgap photon absorption, crucial for advanced optical applications.
- Surface structuring of silicon is key to enhancing its optoelectronic properties.
- Titanium-hyperdoped silicon (Si:Ti) shows potential for near-infrared (NIR) detection.
Purpose of the Study:
- To investigate the effects of ordinary thermal annealing (OTA) and nanosecond laser annealing (NLA) on the surface structure of Si:Ti.
- To optimize Si:Ti for efficient near-infrared light detection.
- To understand the mechanisms behind performance enhancement in annealed Si:Ti.
Main Methods:
- Comparative analysis of OTA and NLA treatments on Si:Ti.
- Atomic-resolved STEM characterization to analyze surface structure and crystallinity.
- Fabrication and testing of Si:Ti photodetectors under near-infrared illumination.
Main Results:
- Both OTA and NLA improved Si:Ti crystallinity, with NLA more effectively reducing the amorphous surface phase.
- OTA formed a 9R-Si phase at the surface, creating a 9R-Si/sc-Si interface.
- NLA-treated Si:Ti photodetector (2.6 J cm⁻²) achieved a responsivity of 151 mA W⁻¹ at 1550 nm and 1 V.
Conclusions:
- NLA significantly enhances Si:Ti photodetector performance by improving crystallization and minimizing titanium diffusion.
- Surface-structured hyperdoped silicon holds promise for high-performance infrared detection.
- Optimized annealing processes are critical for tailoring semiconductor properties for specific applications.
