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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
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Spectroscopic Analysis on Different Stacking Configurations of Multilayered MoSe2
Xiang Hu1,2, Yong Wang1,2, Jiaren Yuan1,2
1School of Physics and Materials Science, Nanchang University, Nanchang 330031, China.
Abstract:
Transition metal dichalcogenides (TMDs) are drawing significant attention due to their intriguing photoelectric properties, and these interesting properties are closely related to the number of layers. Obtaining layer-controlled and high-quality TMD is still a challenge. In this context, we use the salt-assisted chemical vapor deposition to grow multilayered MoSe2 flake and characterize it by Raman spectroscopy, second harmonic generation, and photon luminescence. Spectroscopic analysis is an effective way to characterize the stacking order and optoelectronic properties of two-dimensional materials. Notably, the corresponding mapping reflects the film quality and homogeneity. We found that the grown continuous monolayer, bilayer, and trilayer of MoSe2 sheets with different stacking orders exhibit distinctive features. For bilayer MoSe2, the most stable stacking configurations are the AA' and AB order. And the uniformity of the spectroscopy maps demonstrates the high quality of the stacked MoSe2 sheets.
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