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Related Concept Videos

Hybridization of Atomic Orbitals I03:24

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The mathematical expression known as the wave function, ψ, contains information about each orbital and the wavelike properties of electrons in an isolated atom. When atoms are bound together in a molecule, the wave functions combine to produce new mathematical descriptions that have different shapes. This process of combining the wave functions for atomic orbitals is called hybridization and is mathematically accomplished by the linear combination of atomic orbitals. The new orbitals that...
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Updated: Jun 14, 2025

Generation and Coherent Control of Pulsed Quantum Frequency Combs
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Hexagonal Boron Nitride Based Photonic Quantum Technologies.

Madhava Krishna Prasad1, Mike P C Taverne2,3, Chung-Che Huang4

  • 1Joint Quantum Centre (JQC) Durham-Newcastle, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne NE1 7RU, UK.

Materials (Basel, Switzerland)
|August 29, 2024
PubMed
Summary
This summary is machine-generated.

Hexagonal boron nitride is a promising material for quantum technologies. Researchers are exploring its defects for single-photon emission and developing devices for advanced photonic quantum applications.

Keywords:
chemical vapour depositiondensity functional theoryelectron paramagnetic resonancehexagonal boron nitridemolecular beam epitaxyoptically detected magnetic resonancequantum photonicssingle-photon emittersspin qubitsvan der Waals epitaxy

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Area of Science:

  • Materials Science
  • Quantum Technology
  • Condensed Matter Physics

Background:

  • Hexagonal boron nitride (hBN) is a 2D material with a wide band gap.
  • hBN can host defects acting as single-photon emitters at room temperature.
  • These properties make hBN attractive for photonic quantum technologies.

Purpose of the Study:

  • To review the structure, properties, growth, and transfer of hBN.
  • To discuss the creation and identification of color centers in hBN for quantum applications.
  • To explore heterostructure devices for controlling hBN-based quantum emitters.

Main Methods:

  • Review of existing literature on hBN.
  • Analysis of defect creation and characterization techniques.
  • Examination of theoretical calculations (ab initio) for defect assignment.
  • Overview of device fabrication and electrical tuning methods.

Main Results:

  • hBN's 2D structure and large band gap are suitable for hosting stable quantum defects.
  • Color centers in hBN can function as room-temperature single-photon emitters.
  • Heterostructures enable electrical control and tuning of these quantum emitters.

Conclusions:

  • Significant progress has been made in defect engineering and device fabrication for hBN-based photonic quantum technologies.
  • hBN shows great potential as a scalable platform for future quantum devices.
  • Further research in defect control and device integration is crucial for realizing advanced quantum applications.