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A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices

Chen Fan1,2, Haitao Zhang3,4,5, Huipeng Liu2

  • 1School of Information Science and Technology, North China University of Technology, Beijing 100144, China.

Micromachines
|August 29, 2024
PubMed

Keywords:
capacitancedynamic switchingp-GaN HEMTtrap

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