Circuit-Level Transient Simulation Study of Recovery Characteristics in a Parallel-Resonator-Assisted GaN SBD Limiter

Area of Science:

• Microwave Engineering
• Semiconductor Devices
• Materials Science

Background:

• High-power Gallium Nitride (GaN) Schottky barrier diodes (SBDs) are crucial for microwave limiters.
• Fast recovery time is essential for efficient limiter operation after high-power events.
• Traditional shunt limiter topologies face challenges with large-size GaN SBDs.

Purpose of the Study:

• To investigate and improve the fast-recovery characteristics of high-power GaN SBD limiters.
• To analyze the impact of circuit topology on limiter recovery processes.
• To reduce the recovery time from large-signal limiting to small-signal steady-state operation.

Main Methods:

• A parallel-resonator-assisted topology was introduced into a conventional shunt limiter.
• The resonant unit consists of diode junction capacitance and short-circuited stubs.
• Circuit-level transient simulations were performed using a combined excitation scheme on the ADS platform.

Main Results:

• The parallel resonant unit improved high-frequency passband characteristics for large-size GaN SBDs.
• Transient response after high-power excitation was reshaped, shortening recovery time.
• In the C-band, recovery time decreased from 16.3 ns to 11.2 ns under 50-W input power.

Conclusions:

• Circuit topology plays a significant role in the recovery behavior of high-power GaN SBD limiters.
• The proposed parallel-resonator approach effectively accelerates limiter recovery.
• This method offers a valuable reference for designing fast-recovery microwave limiters and analyzing their transient behavior.