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A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices
Chen Fan1,2, Haitao Zhang3,4,5, Huipeng Liu2
1School of Information Science and Technology, North China University of Technology, Beijing 100144, China.
Micromachines
|August 29, 2024
Summary
This study introduces a new test system to analyze the dynamic switching characteristics of p-GaN HEMT devices. Electrical stress alters parasitic capacitance and threshold voltage, impacting device stability and performance.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are crucial for power electronics.
- Understanding dynamic switching behavior is key to device stability and reliability.
- Previous research focused on dynamic resistance, not dynamic switching characteristics.
Purpose of the Study:
- To investigate the dynamic switching characteristics of p-GaN HEMT devices.
- To analyze the impact of electrical stress on these characteristics.
- To understand the underlying mechanisms causing changes in switching behavior.
Main Methods:
- Development and application of an innovative dynamic switching test system.
- Application of electrical stress to p-GaN HEMT devices.
- Analysis of threshold voltage and parasitic capacitance variations.
- Extraction and comparison of switching waveforms before and after stress.
Main Results:
- Electrical stress induces trap ionization, affecting device electric potential.
- Parasitic capacitance and threshold voltage are altered by electrical stress.
- Dynamic changes in capacitance and threshold voltage vary between devices.
- The test system quantitatively measures parameter drift due to electrical stress.
Conclusions:
- Dynamic switching characteristics offer insights into GaN device stability.
- Electrical stress-induced trap ionization is a primary mechanism affecting switching.
- Device-to-device variations in capacitance changes lead to differing dynamic switching behaviors.
- The developed test system predicts parameter drift, aiding in robust application design.
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