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Updated: Jun 14, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays
Bingheng Meng1,2, Xuanyu Zhang2, Yubin Kang1
1State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China. qhao@bit.edu.cn.
Abstract:
Controlling the random lasing action from disordered media is important to obtain customizable lasers with unprecedented properties. In this paper, systematic investigations of random scattering based on GaAs/AlGaAs axial heterostructure nanowire (NW) arrays are presented. By manipulating the diameter and density of GaAs/AlGaAs axial heterostructure NWs during growth, different types of random lasers (Anderson localized and delocalized random lasers) have been successfully realized. The threshold, Q factor, and spatial coherence of these two types of lasers are experimentally discussed and analyzed. Finally, a proof-of-concept demonstration of speckle-free imaging based on the NW lasers has been conducted. This research enables the tunability of random lasers with exceptional performance and lays the foundation for achieving random lasing control.

