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Diazonium Group Substitution: –OH and –H01:19

Diazonium Group Substitution: –OH and –H

2.7K
Nitrous acid, a weak acid, is prepared in situ via the reaction of sodium nitrite with a strong acid under cold conditions. This nitrous acid prepared in situ reacts with primary arylamines to form arenediazonium salts. Such reactions are known as diazotization reactions. As shown in Figure 1, the formation of arenediazonium salts begins with the decomposition of nitrous acid in an acidic solution to give nitrosonium ions.
2.7K
Diazonium Group Substitution with Halogens and Cyanide: Sandmeyer and Schiemann Reactions01:20

Diazonium Group Substitution with Halogens and Cyanide: Sandmeyer and Schiemann Reactions

1.9K
Arenediazonium substitution reactions occur when the diazonium group is substituted by various functional groups such as halides, hydroxyl, nitrile, etc. For instance, arenediazonium salts react with copper(I) salts of chloride, bromide, or cyanide to form corresponding aryl chlorides, bromides, and nitriles. These reactions are named Sandmeyer reactions. Although the mechanism of this reaction is complicated, as illustrated in Figure 1, they are believed to progress via an aryl copper...
1.9K
Colors and Magnetism03:02

Colors and Magnetism

11.6K
Color in Coordination Complexes
When atoms or molecules absorb light at the proper frequency, their electrons are excited to higher-energy orbitals. For many main group atoms and molecules, the absorbed photons are in the ultraviolet range of the electromagnetic spectrum, which cannot be detected by the human eye. For coordination compounds, the energy difference between the d orbitals often allows photons in the visible range to be absorbed and emitted, which is seen as colors by the human...
11.6K
MOS Capacitor01:25

MOS Capacitor

733
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
733
Formation of Complex Ions03:45

Formation of Complex Ions

23.5K
A type of Lewis acid-base chemistry involves the formation of a complex ion (or a coordination complex) comprising a central atom, typically a transition metal cation, surrounded by ions or molecules called ligands. These ligands can be neutral molecules like H2O or NH3, or ions such as CN− or OH−. Often, the ligands act as Lewis bases, donating a pair of electrons to the central atom. These types of Lewis acid-base reactions are examples of a broad subdiscipline called coordination...
23.5K
Aryldiazonium Salts to Azo Dyes: Diazo Coupling01:11

Aryldiazonium Salts to Azo Dyes: Diazo Coupling

2.9K
The reaction of weakly electrophilic aryldiazonium (also called arenediazonium) salts with highly activated aromatic compounds leads to the formation of products with an —N=N— link, called an azo linkage. This reaction, presented in Figure 1, is known as diazo coupling and occurs without the loss of the nitrogen atoms of the aryldiazonium salt. Highly activated aromatic compounds such as phenols or arylamines favor the diazo coupling reaction. The coupling generally occurs at the...
2.9K

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Updated: Jun 14, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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A solution-processable benzothiazole-substituted formazanate zinc(II) complex designed for a robust resistive memory

Sunita Birara1, Shalu Saini2, Moumita Majumder3

  • 1Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan-342030, India. rkmetre@iitj.ac.in.

Dalton Transactions (Cambridge, England : 2003)
|September 3, 2024
PubMed
Summary

A new zinc complex with redox-active formazan ligands shows promise for resistive random-access memory (RRAM) devices. This material offers excellent switching properties and stability for future memory applications.

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Area of Science:

  • Coordination Chemistry
  • Materials Science
  • Nanotechnology

Background:

  • Novel mononuclear bis(formazanate)zinc complex (1) synthesized using a redox-active formazan ligand.
  • Complex 1 prepared via reaction of zinc acetate dihydrate with the formazan derivative.

Purpose of the Study:

  • Characterize the structure and electrochemical properties of the novel zinc complex.
  • Investigate the potential of complex 1 as a material for resistive switching memory applications.

Main Methods:

  • Synthesis and characterization of the zinc complex.
  • X-ray crystallography to determine solid-state structure.
  • Cyclic voltammetry for electrochemical analysis.
  • Fabrication and testing of [FTO/ZnII L2(1)]/Ag resistive random-access memory (RRAM) devices.

Main Results:

  • Distorted octahedral geometry with ligands coordinating in an 'open' form, creating five-membered chelate rings.
  • Complex 1 exhibits electrochemical reduction and oxidation, forming radical anionic and dianionic states.
  • RRAM devices show high ON/OFF ratio (10^3), low switching voltages (0.9 V SET, -0.75 V RESET), and good endurance/retention.

Conclusions:

  • Redox-active formazanate metal complexes are important for developing advanced memory storage devices.
  • Complex 1 demonstrates significant potential for solution-processable resistive switching memory applications.