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Area of Science:

Optoelectronics
Materials Science
Nanotechnology

Background:

Indium gallium nitride (InGaN) micro-light-emitting diodes (μ-LEDs) are crucial for advanced display technologies like augmented reality (AR).
High internal quantum efficiency (IQE) and light extraction efficiency (LEE) are critical for μ-LED performance.
Traditional methods like wet chemical etching to restore IQE after dry etching negatively impact pixel shape and LEE.

Purpose of the Study:

To overcome the limitations of existing μ-LED fabrication methods.
To enhance the light extraction efficiency (LEE) of InGaN μ-LEDs without compromising pixel shape.
To improve the performance of μ-LEDs for projection display applications.

Main Methods:

Fabrication of 1 μm thin-film-based μ-LED emitter arrays.
Integration of a metallic backside mirror on a patterned dielectric material surrounding the μ-LED mesa.
Utilizing a concave mirror design to redirect photons within the μ-LED structure.

Main Results:

Demonstrated a straightforward integration of the concave mirror into a thin-film LED process.
Achieved enhanced LEE by redirecting photons within the μ-LED structure.
Observed a 2.1-fold improvement in light output within the ±15° emission cone compared to μ-LEDs with vertical sidewalls.

Conclusions:

The developed concave metallic backside mirror effectively enhances LEE in InGaN μ-LEDs.
This method offers a significant improvement for μ-LED projection displays by boosting efficiency and directionality.
The findings pave the way for more efficient and high-performance micro-display technologies.