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Analysis of coupling effect between TID and SET in SOI Tri-Gate nanowire field-effect transistors

Xilong Zhou1, Chenyu Yin1, Hongxia Liu1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China.

Nanotechnology
|September 25, 2024
PubMed

Keywords:
junctionless (JL)nanowire field-effect transistor (NWFET)silicon-on-insulator (SOI)single-event transient (SET)total ionizing dose (TID)tri-gate

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