Ultrathin Ga₂O₃ Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal...

Area of Science:

• Materials Science
• Optoelectronics
• Nanotechnology

Background:

• Low-dimensional gallium oxide (Ga2O3) exhibits unique ultraviolet (UV) photoresponse.
• Existing Ga2O3 photodetectors face challenges in complex fabrication and suboptimal performance.

Purpose of the Study:

• To develop a simple and effective method for preparing ultrathin Ga2O3 layers for photodetector applications.
• To investigate the performance characteristics of Ga2O3-based photodetectors, including response speed and dynamic range.
• To explore the potential of Ga2O3 photodetector arrays for UV source tracking.

Main Methods:

• Ultrathin Ga2O3 layers (approx. 7 nm) were synthesized on quartz rods via UV exposure of liquid gallium.
• The role of UV exposure in curing oxygen vacancy defects was analyzed.
• Fabricated Ga2O3 photodetectors and arrays were characterized for their photoresponse speed, linear dynamic range, and trajectory tracking capabilities.

Main Results:

• The UV-cured Ga2O3 photodetectors demonstrated a fast response time (rise: 64.7 μs; fall: 51.4 μs).
• An exceptional linear dynamic range of 120 dB was achieved.
• Ga2O3 photodetector arrays effectively tracked the motion of a UV light source.

Conclusions:

• A facile UV-assisted method enables the fabrication of high-performance, low-dimensional Ga2O3 photodetectors.
• The developed photodetector arrays offer fast response and trajectory tracking, highlighting the potential of ultrathin Ga2O3 in UV optoelectronics.