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Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors by
Jong-Hyun Kim1, Seung-Hwan Kim2, Hyun-Yong Yu1,3
1Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|October 3, 2024
Summary
Post-exfoliation annealing recovers electric polarization in van der Waals α-In2Se3 ferroelectric semiconductor channel-based field-effect transistors (FeS-FETs). This method enhances device performance for neuromorphic computing and memory applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Van der Waals (vdW) α-In2Se3 ferroelectric semiconductor channel-based field-effect transistors (FeS-FETs) show promise for neuromorphic computing, nonvolatile memory, and optoelectronics.
- Surface imperfections in vdW α-In2Se3 lead to screening charges, hindering electrical polarization and limiting device performance.
Purpose of the Study:
- To develop a method for recovering inherent electric polarization in α-In2Se3 channels.
- To improve the electrical performance of vdW FeS-FETs by addressing surface-related issues.
Main Methods:
- Post-exfoliation annealing (PEA) was employed to treat the α-In2Se3 channel.
- The formation of an ultra-thin In2Se3-3xO3x layer on the α-In2Se3 surface was analyzed.
- Electrical characteristics and ferroelectric resistance switching were measured before and after PEA.
Main Results:
- PEA successfully passivated surface defects and recovered in- and out-of-plane electric polarization.
- The on/off current ratio of α-In2Se3 FeS-FETs significantly increased from 5.99 to 1.84 × 10^6.
- Ferroelectric resistance switching magnitude improved from 1.20 to 26.01.
- Demonstrated gate-modulated artificial synaptic operation, highlighting potential for multifunctional devices.
Conclusions:
- PEA is an effective method to enhance the electrical performance of vdW α-In2Se3 FeS-FETs.
- The engineered interface via PEA is crucial for advanced memory devices and neuromorphic computing applications.
- This work presents a significant breakthrough for realizing high-performance ferroelectric devices.
Keywords:
artificial synapseelectrical polarizationferroelectric semiconductorindium selenidesurface screening chargeMore Related Videos
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