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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
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A hBN/Ga2O3 pn junction diode.
Shambel Abate Marye1, Xin-Ying Tsai2, Ravi Ranjan Kumar1
1International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.
Scientific Reports
|October 8, 2024
Summary
This study develops a novel pseudo-vertical pn heterojunction using hexagonal boron nitride (hBN) and gallium oxide (Ga2O3). The device demonstrates high rectification ratios and stable performance, paving the way for advanced power electronics.
Area of Science:
- Materials Science
- Semiconductor Physics
Background:
- Hexagonal boron nitride (hBN) and gallium oxide (Ga2O3) are key next-generation materials for deep ultraviolet (DUV) emission and power electronics.
- Developing efficient heterojunctions is crucial for realizing their full potential.
Purpose of the Study:
- To fabricate and characterize a pseudo-vertical pn heterojunction device combining p-type hBN and n-type Ga2O3.
- To evaluate the device's electrical properties, including rectification ratio, current-voltage characteristics, and stability.
Main Methods:
- Fabrication of a pseudo-vertical pn hBN/Ga2O3 heterojunction.
- Electrical characterization using current-voltage (I-V) and capacitance-voltage (C-V) measurements.
- Hall effect measurements to confirm p-type characteristics of hBN.
Main Results:
- Achieved high rectification ratios >10^5 at 300 K and ~400 at 475 K.
- Demonstrated stable and repeatable device performance across temperature ramps up to 475 K.
- Confirmed p-type conductivity in Mg-doped hBN with a built-in voltage of 2.34 V.
Conclusions:
- The fabricated hBN/Ga2O3 heterojunction exhibits excellent rectification and thermal stability.
- This device shows promise for high-performance power electronic applications.
- Further research will explore the optical emission properties of this heterojunction system.
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