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Updated: Jun 11, 2025

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Published on: July 19, 2019
Formation of Alloyed Cu2CoZn1-Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells
Shuyu Li1, Yanchun Yang1,2, Yiming Wang1
1Key Laboratory of Semiconductor Photovoltaic at Universities of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West University Road, Huhhot, Inner Mongolia 010021, China.
Abstract:
Partial substitution of cations is crucial for suppressing harmful defects in Cu2ZnSn(S,Se)4 thin-film solar cells. In this study, based on the mixed n-butylammonium and butyrate solution system, the alloyed Cu2CoZn1-Sn(S,Se)4 phase can be prepared by substituting Zn2+ with Co2+, which can suppress harmful defects and optimize the crystallinity of the Cu2ZnSn(S,Se)4 absorption layer, and improve the photoelectric conversion efficiency (PCE) of devices. By systematic investigation of the impact of Co content on the performance of devices, the optimal substitution amount of Zn2+ with Co2+ is 0.05. At this time, PCE, the open-circuit voltage (VOC), current density (JSC), and fill factor (FF) of the devices can reach 9.0%, 416 mV, 33.87 mA/cm2, and 64%, respectively. It is the first time that the replacement of Zn2+ with Co2+ is applied to optimize PCE of CZTSSe solar cells. The excellent results also demonstrate that the substitution of Zn2+ with Co2+ can become a new approach for further performance optimization of Cu2ZnSn(S,Se)4 solar cells.
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