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Updated: Mar 12, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

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Published on: February 27, 2017

Dual-Functional ITO Interlayer for Effective Defect Passivation and Cationic Composition Engineering in Kesterite

Yutian Wang^1,2, Yufei Li^1,2, Letu Siqin^1,2

¹School of Physical Science and Technology, Inner Mongolia University, Hohhot, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)

|March 11, 2026

Summary

This summary is machine-generated.

This study introduces an Indium Tin Oxide (ITO) interlayer to improve Copper Zinc Tin Sulfoselenide (CZTSSe) solar cells by reducing defects and preventing elemental loss. This optimization enhances photoelectric conversion efficiency to 13.11%.

Keywords:

Cu2ZnSn(S,Se)4 ITO interlayer bulk and interface defects carrier recombination

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Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

Copper Zinc Tin Sulfoselenide (CZTSSe) solar cells face performance limitations due to back interface interdiffusion and absorber defects.
These issues hinder the efficiency and stability of CZTSSe photovoltaic devices.

Purpose of the Study:

To address limitations in CZTSSe solar cells by introducing an Indium Tin Oxide (ITO) interlayer.
To investigate the dual-functional role of ITO as a diffusion barrier and a source of Sn and In during selenization.
To optimize CZTSSe absorber layer composition and reduce defect density.

Main Methods:

Introduction of an ITO interlayer at the back interface of CZTSSe solar cells.
Analysis of ITO's function as a diffusion barrier during the initial selenization stage.
Observation of ITO's role as a self-sacrificing layer supplying Sn and In in later selenization stages.
Characterization of defect reduction and elemental composition redistribution within the absorber layer.

Main Results:

The ITO interlayer effectively suppressed elemental migration, preventing loss towards the Mo electrode.
ITO acted as a source for Sn and In, reducing Sn-related vacancy and substitutional defects.
Reverse saturation current density decreased significantly from 4.14 × 10^-7 to 2.67 × 10^-8 A/cm², indicating reduced carrier recombination.
The optimized ITO-10 sample achieved a photoelectric conversion efficiency of 13.11%.

Conclusions:

The ITO interlayer demonstrates a synergistic mechanism for defect regulation and bulk doping in CZTSSe solar cells.
This approach significantly enhances the performance of CZTSSe solar cells by mitigating key limitations.
ITO presents a promising interlayer material for advancing CZTSSe solar cell technology.