Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoN Electrodes via TiN Passivation...

The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has amplified the demand for electrode materials featuring specific characteristics, such as low resistivity, high work function, chemical stability, excellent interface quality with high-k dielectrics, and superior mechanical properties. In this study, molybdenum nitride (MoN) films were deposited using a plasma-enhanced atomic layer deposition (PEALD) employing bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and NH₃ plasma for DRAM capacitor electrode applications. Depending on the deposition temperatures of the PEALD MoN films ranging from 200 to 400 °C, the Mo/N ratio and crystal structure varied, transitioning from the cubic NaCl-B1-type MoN phase with Mo/N ratio of 1.4 to the cubic γ-Mo₂N phase with Mo/N ratio of 1.9. Notably, MoN films grown at 400 °C exhibited low resistivity (435 μΩ·cm), a high work function (5.28 eV), and superior mechanical hardness (11.3 GPa) compared to ALD TiN films. Despite these excellent properties, the PEALD MoN electrode demonstrated insufficient chemical stability, particularly in terms of oxidation resistance and interface quality with ALD HfZr_1-O₂ (HZO) films. This resulted in poor morphology and the formation of significant oxygen-deficient HZO layers (such as HfO_2-), leading to considerable degradation in the electrical performance of metal-insulator-metal (MIM) capacitors. To mitigate this issue, a thin (2.5-14 nm) ALD TiN layer was introduced as a passivation layer between the MoN bottom electrode and HZO dielectric. The TiN-passivated MoN (TiN/MoN) electrode showed substantially enhanced oxidation resistance and reduced interfacial reactions with the HZO dielectric. Consequently, MIM capacitors with TiN/MoN bottom electrodes demonstrated outstanding electrical performance, including excellent dielectric properties, low leakage current density, and high mechanical strength. Hence, this study proposes a promising candidates for storage nodes in the next-generation DRAM capacitors.