Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

314
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
314
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

298
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
298
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

325
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
325
MOSFET01:16

MOSFET

428
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
428

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Post-Moore two-dimensional integrated electronics for angstrom-nodes.

National science review·2026
Same author

Monolithic Integration of Carbon Nanotube-Based Complementary Field-Effect Transistors with 3D-Stacked Photodiodes for Unified Sensing and Computing.

ACS nano·2026
Same author

Two-Dimensional Semiconductors for Postsilicon Electronics: From Transistors to Integrated Circuits.

ACS nano·2026
Same author

Confinement-Driven Redox Inversion and Predicted Ferromagnetism in One-Dimensional Sc<sub>3</sub>Cl<sub>8</sub> within Single-Walled Carbon Nanotubes.

Nano letters·2026
Same author

Critical point-based wireless sensors enabling tiny perturbation detection.

Science advances·2026
Same author

Quantum Phase Transition of a Molecular Radical Pair.

Journal of the American Chemical Society·2026

Related Experiment Video

Updated: Jun 10, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes.

Jinshuai Lv1,2, Zizhuo Shen2, Dehuan Meng2

  • 1Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China.

ACS Applied Materials & Interfaces
|October 15, 2024
PubMed
Summary

Optimized dual-gate aligned carbon nanotube field-effect transistors (A-CNT DG-FETs) achieve superior switching characteristics. This breakthrough paves the way for high-performance, low-power integrated circuits competing with silicon technology.

Keywords:
aligned carbon nanotubesdielectric layerdual-gategate matchinggate metalsubthreshold slope

More Related Videos

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

9.4K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.4K

Related Experiment Videos

Last Updated: Jun 10, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K
Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

9.4K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.4K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Aligned carbon nanotubes (A-CNTs) offer atomic-scale thickness and high carrier mobility for advanced integrated circuits (ICs).
  • Disorder in high-density A-CNT transistors degrades performance, deviating from theoretical values.
  • Dual-gate (DG) configurations improve gate control but A-CNT DG-FETs still show nonideal switching.

Purpose of the Study:

  • To systematically investigate and optimize aligned carbon nanotube dual-gate field-effect transistors (A-CNT DG-FETs).
  • To address matching issues between top-gate (TG) and bottom-gate (BG) stacks in A-CNT DG-FETs.
  • To achieve enhanced switching characteristics for next-generation ICs.

Main Methods:

  • Detailed study of top-gate (TG) and bottom-gate (BG) stack matching in A-CNT DG-FETs.
  • Optimization of gate metal materials and dielectric layer thickness.
  • Fabrication and characterization of 20 nm channel A-CNT DG-FETs.

Main Results:

  • Achieved leading switching characteristics in 20 nm channel A-CNT DG-FETs.
  • Demonstrated an on-state current density (Ion) up to 1.47 mA/μm.
  • Obtained a peak transconductance (Gm) of 2 mS/μm, subthreshold slope (SS) of 83 mV/decade, and current on/off ratio of 106.

Conclusions:

  • Optimized A-CNT DG-FETs exhibit excellent performance, overcoming previous limitations.
  • This work provides crucial experimental guidance for developing high-performance A-CNT DG-FETs.
  • The findings are applicable to advanced technology nodes and two-dimensional channel materials.