A Radial Distribution Function Based Recognition Algorithm of Point Defects in Large-Scale β-Ga2O3 Systems
Mengzhi Yan1, Junlei Zhao2, Jesper Byggmästar3
1State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China.
The Journal of Physical Chemistry Letters
|October 16, 2024
Summary
We developed an accurate algorithm to identify intrinsic defects in beta-gallium oxide (β-Ga2O3) using computational modeling. This method achieves over 95% accuracy, enabling real-time defect detection in simulations.
Area of Science:
- Materials Science
- Computational Materials Science
- Semiconductor Physics
Background:
- Intrinsic defects significantly impact semiconductor properties, especially in ultrawide bandgap materials like β-Ga2O3.
- Complex defect configurations in β-Ga2O3 hinder accurate characterization via traditional computational methods.
Purpose of the Study:
- To develop an accurate computational method for identifying intrinsic point defects in β-Ga2O3.
- To enable large-scale atomistic modeling and real-time defect detection in β-Ga2O3.
Main Methods:
- Integration of particle swarm optimization (PSO) and K-means clustering (K-MC) algorithms.
- Development of a novel algorithm for explicit identification of intrinsic point defects.
- Application of the algorithm to dynamic simulations for real-time detection feasibility.
Main Results:
- The developed algorithm achieves a recognition accuracy exceeding 95% for intrinsic point defects in β-Ga2O3.
- Demonstrated feasibility of dynamic real-time detection of defects through simulations.
Conclusions:
- The PSO-K-MC algorithm provides an effective solution for accurate defect identification in β-Ga2O3.
- This advancement facilitates more reliable large-scale atomistic simulations and real-time defect monitoring in semiconductor research.


