Electrode-Dependent and Tunable Sub-to-Super-Linear Responsivity in Mott Material-Enabled Near-Infrared...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Optoelectronics

Background:

• The Internet of Perceptions (IoP) faces data transmission and hardware challenges.
• Near-sensor computing architectures reduce processing delays and energy consumption.
• Innovative hardware for multifunctional near-sensor image processing is needed.

Purpose of the Study:

• To develop Mott material (vanadium dioxide)-based photodetectors for near-sensor image processing.
• To investigate electrode-dependent and tunable super-linear photoresponse.
• To demonstrate near-sensor processing capabilities for applications like night vision.

Main Methods:

• Fabrication of vanadiun dioxide-based photodetectors.
• Characterization of opto-thermo-electro-coupled phase transitions.
• Analysis of electrode-dependent super-linear photoresponse mechanism (electron doping and Seebeck coefficient).

Main Results:

• Achieved tunable super-linear photoresponse (α > 33) with ultralow bias.
• Demonstrated high photocurrent on/off ratio (>10^5), responsivity (≈500 A W^-1), and detectivity (≈3.9 × 10^12 Jones).
• Exhibited rapid response speeds (τr = 2 µs, τd = 5 µs) and selective near-sensor processing.

Conclusions:

• Developed advanced photodetectors with superior optoelectronic properties.
• The electrode-dependent super-linear response is attributed to electron doping effects.
• These devices show promise for intelligent edge sensing, medical imaging, and flexible electronics.