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Related Experiment Video

Updated: Jun 24, 2026

Wideband Optical Detector of Ultrasound for Medical Imaging Applications

Wideband Optical Detector of Ultrasound for Medical Imaging Applications

Published on: May 11, 2014

2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications.

Madani Labed^1,2, Ji-Yun Moon³, Seung-Il Kim³

¹Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.

|October 22, 2024

Summary

Two-dimensional materials (2DMs) enhance ultrawide bandgap semiconductors for extreme conditions. Integrating 2DMs like graphene improves device performance and resilience in harsh environments.

Keywords:

2DMs 2DMs Integration 2DMs growth 2DMs transfer UWBS harsh environment power devices thermal management

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Last Updated: Jun 24, 2026

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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Published on: October 12, 2019

Area of Science:

Materials Science
Semiconductor Physics
Nanotechnology

Background:

Ultrawide bandgap (UWBG) semiconductors (e.g., AlGaN, diamond, Ga2O3) enable advanced electronics for harsh environments.
Challenges include low thermal conductivity, poor P-type conductivity, and scalability issues, limiting performance under extreme conditions.

Purpose of the Study:

To review the integration of two-dimensional materials (2DMs) with UWBG semiconductors.
To address performance limitations of UWBG devices in high-temperature and irradiation environments.

Main Methods:

Exploration of various 2DMs, including graphene, hexagonal boron nitride, transition metal dichalcogenides, and 2D Ga2O3.
Analysis of how 2DMs' properties (thermal conductivity, mechanical strength, electrical characteristics) mitigate UWBG material challenges.

Main Results:

Significant improvements in UWBG device performance observed after incorporating 2D materials.
Enhanced functionality and resilience of devices in harsh environmental conditions demonstrated.

Conclusions:

2D materials offer a promising strategy to overcome limitations in UWBG semiconductor devices.
Further research into 2DM integration can advance UWBG technology for extreme applications.