Enhanced performance of flexible BiFeO3 ferroelectric memory with Mica substrate via SrTiO3 buffer layer

Xingpeng Liu1, Yiming Peng1, Fabi Zhang1

  • 1Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China.

Scientific Reports
|October 25, 2024
PubMed
Summary

Flexible bismuth ferrite (BiFeO3) films show excellent fatigue resistance for wearable electronics. These high-quality films maintain ferroelectric properties even after extensive use and bending, paving the way for advanced flexible devices.

Related Concept Videos