A Model for Dry Electron Beam Etching of Resist

Area of Science:

• Materials Science
• Nanotechnology
• Physics

Background:

• Dry electron beam etching of the resist (DEBER) is a promising microstructuring technique.
• Its high throughput and simplicity are advantageous over other methods.
• The precise mechanism of profile formation in DEBER remained unclear, limiting optimization.

Purpose of the Study:

• To develop a detailed physical model for DEBER.
• To elucidate the mechanism of microstructure profile formation in DEBER.
• To enable theoretical study and optimization of the DEBER technique.

Main Methods:

• Developed a physical model incorporating e-beam scattering, main-chain scissions, thermal depolymerization, monomer diffusion, and resist reflow.
• Implemented a simulation algorithm based on the physical model.
• Performed experimental verification of the simulation results.

Main Results:

• The developed physical model accurately simulates DEBER profile formation.
• Experimental verification confirmed the model's reliability.
• Simulations estimated ultimate DEBER characteristics: ~300 nm minimum line width and ~70° maximum profile slope.

Conclusions:

• The physical model provides a reliable framework for understanding and optimizing DEBER.
• DEBER is capable of fabricating high-resolution microstructures.
• The model facilitates further advancements in DEBER-based microfabrication.