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Updated: Jun 9, 2025

Fabrication and Characterization of Superconducting Resonators
Published on: May 21, 2016
Strain-Induced Frequency Splitting in PT Symmetric Coupled Silicon Resonators
Lifeng Wang1, Shangyang Zhang1, Qunce Yuan1
1Key Laboratory of MEMS of the Ministry of Education, School of Electronic Science & Engineering, Southeast University, Nanjing 210096, China.
Abstract:
When two resonators of coupled silicon resonators are identical and the gain on one side is equal to the loss on the other side, a parity-time (PT) symmetric-coupled silicon resonator is formed. As non-Hermitian systems, the PT-symmetric systems have exhibited many special properties and interesting phenomena. This paper proposes the strain-induced frequency splitting in PT symmetry-coupled silicon resonators. The frequency splitting of the PT system caused by strain perturbations is derived and simulated. Theory and simulation both indicate that the PT system is more sensitive to strain perturbation near the exceptional point (EP) point. Then, a feedback circuit is designed to achieve the negative damping required for PT symmetry. Based on a simple silicon-on-insulator (SOI) process, the silicon resonator chip is successfully fabricated. After that, the PT-symmetric-coupled silicon resonators are successfully constructed, and the frequency splitting phenomenon caused by strain is observed experimentally.
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