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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

309
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
309
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
298

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Updated: Jun 9, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs.

Luca Panarella1,2, Stanislav Tyaginov2, Ben Kaczer2

  • 1KU Leuven, Celestijnenlaan 200D, Heverlee 3001, Belgium.

ACS Applied Materials & Interfaces
|October 28, 2024
PubMed
Summary
This summary is machine-generated.

Researchers developed a self-consistent method to identify defects in 2D field-effect transistors. This technique combines experimental measurements with technology computer-aided design (TCAD) simulations to analyze charge trapping and improve device stability.

Keywords:
2D materialshysteresis of current−voltage characteristicsinterface trapsoxide trapsphysics-based modelingreliability

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Device Engineering

Background:

  • Integrated 2D field-effect transistors (FETs) are crucial for next-generation electronics.
  • Defects in these devices significantly impact performance and stability.
  • Characterizing these defects is essential for reliable device fabrication.

Purpose of the Study:

  • To develop and validate a self-consistent method for identifying and characterizing defects in 300 mm integrated 2D FETs.
  • To correlate defect energy levels with observed device behavior, specifically hysteresis.
  • To pinpoint the specific atomic defects responsible for performance degradation.

Main Methods:

  • Utilized transfer characteristic hysteresis measurements.
  • Employed physics-based modeling of charge carrier capture/emission using technology computer-aided design (TCAD).
  • Integrated experimental data with TCAD simulations for defect energy distribution extraction.

Main Results:

  • Successfully characterized charge trapping/detrapping based on defect energy positions.
  • Extracted a Gaussian-approximated defect band in the AlOₓ interlayer, centered ~0.1 eV below the WS₂ conduction band minimum.
  • Reproduced experimental hysteretic transfer characteristics using extracted defect parameters in transient TCAD simulations.

Conclusions:

  • Identified aluminum interstitial and oxygen vacancies as the primary defects causing hysteresis in AlOₓ/HfO₂ gated WS₂ devices.
  • These defects are detrimental to device stability due to their accessibility by channel carriers.
  • The developed method is broadly applicable to various 2D channel/gate stack combinations.