Border Trap-Enhanced Ga₂O₃ Nonvolatile Optoelectronic Memory

Nonvolatile deep ultraviolet optoelectronic memory (DUVOEM) holds immense potential in cyberphysical systems, offering high storage density, swift conversion speeds, and robust data security. However, the current data retention time, typically limited to milliseconds or hours, mostly underperforms the expectations of years as a nonvolatile memory. In this work, we present a β-Ga₂O₃/SiO₂/Si thin-film transistor DUVOEM with an enhanced data storage capability via trapping and releasing of photogenerated holes in border traps. Specifically, the photogenerated holes in β-Ga₂O₃ will tunnel through SiO₂ and be captured by these defects. Innovatively, the much slower holes' release process from the border traps has been harnessed in developing outstanding nonvolatile optoelectronic memories. Rapid writing and erasing speeds, long-time retention (≥10 years), and high robustness demonstrate its practical application values. This study not only provides a novel strategy for nonvolatile DUVOEM but also provides an instance of functionalizing β-Ga₂O₃ memory with common defects in Si technology.