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MOS Capacitor

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Updated: Jun 9, 2025

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

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Published on: August 17, 2017

Border Trap-Enhanced Ga₂O₃ Nonvolatile Optoelectronic Memory.

Yonghui Zhang^1,2, Rui Zhu^2,3, Wenxing Huo⁴

¹School of Physics and Optoelectronic Engineering, Shandong University of Technology, 255000 Zibo, Shandong P. R. China.

|October 30, 2024

Summary

This summary is machine-generated.

This study introduces a new deep ultraviolet optoelectronic memory using β-Ga₂O₃/SiO₂/Si. It achieves over 10 years of data retention by utilizing defects for hole trapping, enhancing nonvolatile memory capabilities.

Keywords:

border trap gallium oxide nonvolatile memory optoelectronic memory silicon dioxide

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Area of Science:

Materials Science
Semiconductor Physics
Optoelectronics

Background:

Nonvolatile deep ultraviolet optoelectronic memory (DUVOEM) is crucial for cyberphysical systems due to its high storage density, speed, and security.
Current DUVOEM technologies suffer from limited data retention, often measured in milliseconds or hours, falling short of the desired multi-year nonvolatility.

Purpose of the Study:

To develop a DUVOEM with significantly enhanced and long-term data retention capabilities.
To explore the use of defect engineering in β-Ga₂O₃ for improved nonvolatile memory performance.

Main Methods:

Fabrication of a β-Ga₂O₃/SiO₂/Si thin-film transistor structure.
Utilizing photogenerated holes in β-Ga₂O₃ that tunnel through SiO₂ and are trapped in border defects.
Harnessing the slow release of trapped holes to achieve long-term data storage.

Main Results:

Demonstrated a DUVOEM with data retention exceeding 10 years.
Achieved rapid writing and erasing speeds.
Exhibited high robustness, indicating practical application potential.

Conclusions:

The developed β-Ga₂O₃/SiO₂/Si DUVOEM offers a novel strategy for achieving long-term nonvolatile optoelectronic memory.
Functionalizing β-Ga₂O₃ with common silicon technology defects is a viable approach for advanced memory applications.